दीनदयाल उपाध्याय गोरखपुर विश्‍वविद्यालय

Deen Dayal Upadhyaya Gorakhpur University

(Accredited A++ by NAAC)
100 Year Logo

Dr. Narendra Yadava                

Assistant Professor (On Contract)

Department of Electronics & Communication Engineering

Modelling and Simulation of Nano-/Micro-electronic devices, particularly MOS devices.

S.No. Employer Designation From To
1 Deen Dayal Upadhyaya Gorakhpur University Member of IPR Cell December 2023 TILL DATE
2 Deen Dayal Upadhyaya Gorakhpur University Member, DQAC August 2024 TILL DATE
S.No. Title Journal Volume Year Contribution
1 Synergistic Effect of Ferroelectric and HfO2/SiO2 Hetero dielectrics in Junctionless FET for Analog and RF Applications Advanced Theory and Simulations 7 2024 Co-author
2 Impact of Work Function Tunability on Thermal and RF Performance Of P-Type Window Based Junctionless Transistor Journal of Advances in Electrical and Electronic Engineering 1 2022 Co-author
3 Improvements in Analog Performance of Dual Metal Gate based Silicon-on-Insulator Junctionless Transistor with Pocket Doped Window Journal of Microelectronics and Solid-State Devices 8 2021 Co-author
4 RF Performance Investigation of NiO Pocket on Ga2O3 based Hetero-MOSFET Semiconductors, Springer 55 2021 First Author
S.No. Name of Award Agency Year
1 Awarded for Outstanding Contribution in Research and Teaching in The Field of Higher Education Deen Dayal Upadhyaya Gorakhpur University, Gorakhpur, 273009, U.P. 2022
2 Best paper award International Conference on VLSI & Microwave and Wireless Technologies (ICVMWT-2021) 2021
3 Best paper award International Conference on Electrical and Electronics Engineering (ICE3 2020), 2020
4 Best paper award Uttar Pradesh Section International Conference (UPCON-2018) 2018
5 UGC-NET and JRF JULY 2018 UGC 2018
6 UGC-NET UGC 2017
7 GATE–2017 IIT, Roorkee 2017
8 GATE–2014 IIT, Kharagpur 2014
S.No. Title Patent Number Year of Filing/Award/Published
1 Halo Doped Ga2O3/Graphene Heterostructure based MOSFET 466834 2023
2 Halo Doped Ga2O3/BP Heterostructure based MOSFET 534788 2024
3 A Heteroepitaxial Beta-Phase Gallium Oxide on 4H-Silicon Carbide Substrate Based Device and its Method of Fabrication 202411052612 2024
S.No. Title of Chapter Page Numbers Title of Book Publisher ISBN Year
1 Analysis of NaCl electrolyte based SOI-ISFET pH Sensor 77-85 Intelligent Computing and Communication Springer Singapore 9789811510847 2020
2 Analysis of RSNM and WSNM of 6T SRAM Cell Using Ultra Thin Body FD-SOI MOSFET 619-627 Advances in Signal Processing and Communication Springer Singapore 9789811325533 2019
3 Analysis of N+N- Epi-Source Asymmetric Double Gate FD-SOI MOSFET 541-549 Intelligent Engineering Informatics. Advances in Intelligent Systems and Computing Springer Singapore 9789811075667 2018